Shallow trench isolation structure having a nitride plug

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United States of America Patent

PATENT NO 9443929
APP PUB NO 20150054080A1
SERIAL NO

14532230

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Abstract

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A semiconductor structure and method for forming a shallow trench isolation (STI) structure having one or more oxide layers and a nitride plug. Specifically, the structure and method involves forming one or more trenches in a substrate. The STI structure is formed having one or more oxide layers and a nitride plug, wherein the STI structure is formed on and adjacent to at least one of the one or more trenches. One or more gates are formed on the substrate and spaced at a distance from each other. A dielectric layer is formed on and adjacent to the substrate, the STI structure, and the one or more gates.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Byeong Y Lagrangeville, US 53 1073
Narasimha, Shreesh Beacon, US 133 1488

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