LOCAL INTERCONNECTS BY METAL-III-V ALLOY WIRING IN SEMI-INSULATING III-V SUBSTRATES
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Nov 5, 2014
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May 30, 2013
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Abstract
A structure and method of producing a semiconductor structure including a semi-insulating semiconductor layer, a plurality of isolated devices formed over the semi-insulating semiconductor layer, and a metal-semiconductor alloy region formed in the semi-insulating semiconductor layer, where the metal-semiconductor alloy region electrically connects two or more of the isolated devices. The metal-semiconductor alloy region has a metal concentration in a range from 1×1021 atoms/cm3 to 1×1023 atoms/cm3
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