FinFET structure and method to adjust threshold voltage in a FinFET structure

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United States of America Patent

PATENT NO 9171954
APP PUB NO 20150054093A1
SERIAL NO

14537139

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Abstract

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FinFET structures and methods of manufacturing the FinFET structures are disclosed. The method includes performing an oxygen anneal process on a gate stack of a FinFET structure to induce Vt shift. The oxygen anneal process is performed after sidewall pull down and post silicide.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cartier, Eduard A New York, US 89 1881
Greene, Brian J Wappingers Falls, US 85 1472
Guo, Dechao Niskayuna, US 268 2401
Wang, Gan Fishkill, US 65 1308
Wang, Yanfeng Cupertino, US 124 699
Wong, Keith Kwong Hon Wappingers Falls, US 241 2675

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