Semiconductor device and method of forming interconnect structure over seed layer on contact pad of semiconductor die without undercutting seed layer beneath interconnect structure
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United States of America Patent
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Aug 11, 2015
Grant Date -
Feb 26, 2015
app pub date -
Oct 1, 2014
filing date -
Jun 23, 2011
priority date (Note) -
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Abstract
A semiconductor device has a semiconductor die with a first conductive layer formed over the die. A first insulating layer is formed over the die with a first opening in the first insulating layer disposed over the first conductive layer. A second conductive layer is formed over the first insulating layer and into the first opening over the first conductive layer. An interconnect structure is constructed by forming a second insulating layer over the first insulating layer with a second opening having a width less than the first opening and depositing a conductive material into the second opening. The interconnect structure can be a conductive pillar or conductive pad. The interconnect structure has a width less than a width of the first opening. The second conductive layer over the first insulating layer outside the first opening is removed while leaving the second conductive layer under the interconnect structure.
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