MEMORY CIRCUIT AND METHOD FOR DISSIPATING EXTERNAL MAGNETIC FIELD
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United States of America Patent
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Issued Date -
Feb 26, 2015
app pub date -
Jun 6, 2011
filing date -
Jun 6, 2011
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
Memory circuit and method for at least partially dissipating an external magnetic field before the magnetic field affects operation of an array of addressable magnetic storage element stacks in the memory circuit. Multiple dummy magnetic storage element stacks are provided around the periphery of the array. Each of the dummy stacks is substantially circular for orienting along the external magnetic field, thereby causing the dissipation. Each of the addressable and the dummy stacks may be formed with a magnetic tunnel junction (MTJ).
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