Method of manufacturing semiconductor apparatus
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United States of America Patent
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Aug 9, 2016
Grant Date -
Feb 26, 2015
app pub date -
Jul 22, 2014
filing date -
Aug 22, 2013
priority date (Note) -
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Abstract
A method of manufacturing a semiconductor apparatus comprising forming an electrode on a structure provided on a substrate, the structure including a wiring pattern and an interlayer insulation film, forming a first film covering the electrode and the structure, forming an opening in a portion of the first film inside an outer edge of a convex portion formed by steps between upper faces of the electrode and the structure so as to expose a first portion as a portion of the upper face of the electrode, forming a second film covering the first film and the first portion, forming a protective film covering the first portion, the convex portion, and a periphery of the convex portion by patterning the second film, and forming a third film on the first film and the protective film by spin coating.
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