Memory cells with recessed electrode contacts

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United States of America Patent

PATENT NO 9147839
APP PUB NO 20150060751A1
SERIAL NO

14019061

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Abstract

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Memory cells with recessed electrode contacts and methods of forming the same are provided. An example memory cell can include an electrode contact formed in a substrate. An upper surface of the electrode contact is recessed a distance relative to an upper surface of the substrate. A first portion of a memory element is formed on an upper surface of the electrode contact and the upper surface of the substrate.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ramaswamy, D V Nirmal Boise, US 91 654
Sills, Scott E Boise, US 205 1176

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