TUNABLE LIGHT-EMITTING DIODE
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United States of America Patent
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Mar 3, 2015
Grant Date -
Mar 5, 2015
app pub date -
Sep 5, 2013
filing date -
Sep 5, 2013
priority date (Note) -
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Abstract
A method of forming a light-emitting diode including determining a first level of tensile stress to be applied to a base substrate including a plurality of quantum well layers to adjust a band-gap of the base substrate to a predetermined band-gap. The first level of tensile stress is generated in the base substrate by forming a tensile-stressing layer on the base substrate.
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