Trench isolation structures and methods for bipolar junction transistors

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United States of America Patent

PATENT NO 9318551
APP PUB NO 20150060950A1
SERIAL NO

14527042

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Abstract

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Device structures, fabrication methods, and design structures for a bipolar junction transistor. A first isolation region is formed in a substrate to define a lateral boundary for an active device region and an intrinsic base layer is formed on the substrate. The intrinsic base layer has a section overlying the active device region. After the intrinsic base layer is formed, the first isolation region is partially removed adjacent to the active device region to define a trench that is coextensive with the substrate in the active device region and that is coextensive with the first isolation region. The trench is at least partially filled with a dielectric material to define a second isolation region.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Camillo-Castillo, Renata Essex Junction, US 47 273
Khater, Marwan H Astoria, US 113 2168

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