IMAGE SENSORS WITH SILICIDE LIGHT SHIELDS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Aug 20, 2014
filing date -
Aug 27, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
An image sensor with an array of image sensor pixels is provided. Each image pixel may include a photodiode and associated pixel circuits formed in a semiconductor substrate. Buried light shielding structures may be formed on the substrate to prevent pixel circuitry that is formed in the substrate between two adjacent photodiodes from being exposed to incoming light. The buried light shields may be formed over conductive gate structures. A metal silicide layer may be formed to completely cover these conductive gate structures. Antireflective coating material may optionally be formed over the metal silicide layer. Forming gate structures with a metal silicide liner can help reduce optical pixel crosstalk and enhance global shutter efficiency.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully