Importance

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Abstract

A nonvolatile semiconductor memory device includes first and second memory blocks which are disposed adjacent to each other in a first direction. The first and second memory blocks each include a plurality of bit lines, a plurality of word lines, which are disposed to extend in a second direction, and a memory cell, which is connected to any of the plurality of word lines. The first memory block includes a first selection gate line which is connected to one end of the memory cell, and the second memory block includes a second selection gate line in the same manner. An end portion of one end of the first selection gate line includes an L-shaped portion, and an end portion of one end of the second selection gate line includes a linear portion. A first contact is disposed on the L-shaped portion of the first selection gate.

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First Claim