Semiconductor devices and methods of manufacture
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United States of America Patent
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Mar 29, 2016
Grant Date -
Mar 5, 2015
app pub date -
Sep 11, 2013
filing date -
Aug 29, 2013
priority date (Note) -
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Abstract
Semiconductor devices with reduced substrate defects and methods of manufacture are disclosed. The method includes forming at least one gate structure over a plurality of fin structures. The method further includes removing dielectric material adjacent to the at least one gate structure using a maskless process, thereby exposing an underlying epitaxial layer formed adjacent to the at least one gate structure. The method further includes depositing metal material on the exposed underlying epitaxial layer to form contact metal in electrical contact with source and drain regions, adjacent to the at least one gate structure. The method further includes forming active areas and device isolation after the formation of the contact metal, including the at least one gate structure. The active areas and the contact metal are self-aligned with each other in a direction parallel to the at least one gate structure.
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