Semi-conductor device with epitaxial source/drain facetting provided at the gate edge
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United States of America Patent
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Sep 6, 2016
Grant Date -
Mar 5, 2015
app pub date -
Nov 5, 2014
filing date -
Jun 27, 2012
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Abstract
A semiconductor structure includes an active layer located on a substrate and a first and a second gate structure located on the active layer. A first raised epitaxial region is located on the active layer between the first and the second gate. The first raised epitaxial region has a first facet shaped edge and a first vertical shape edge, such that the first facet shaped edge is located adjacent the first gate structure. A second raised epitaxial region is also located on the active layer between the first and the second gate structure. The second raised epitaxial region has a second facet shaped edge and a second vertical shape edge, such that the second facet shaped edge is located adjacent the second gate structure. A trench region is located between the first and the second vertical shaped edge for electrically isolating the first and the second raised epitaxial region.
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