Devices having inhomogeneous silicide schottky barrier contacts
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United States of America Patent
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Feb 16, 2016
Grant Date -
Mar 5, 2015
app pub date -
Aug 28, 2014
filing date -
Aug 29, 2013
priority date (Note) -
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Abstract
A method of fabricating Schottky barrier contacts for an integrated circuit (IC). A substrate including a silicon including surface is provided having a plurality of transistors formed thereon, where the plurality of transistors include at least one exposed p-type surface region and at least one exposed n-type surface region on the silicon including surface. A plurality of metals are deposited including Yb and Pt to form at least one metal layer on the substrate. The metal layer is heated to induce formation of an inhomogeneous silicide layer including both Ptsilicide and Ybsilicide on the exposed p-type and n-type surface regions.
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