HIGH DENSITY RESISTOR
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United States of America Patent
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Issued Date -
Mar 5, 2015
app pub date -
Aug 27, 2013
filing date -
Aug 27, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
At least one three dimensional semiconductor fin is formed from a top semiconductor material of a substrate. A dielectric material is formed along vertical sidewalls and an upper surface of the at least one three dimensional semiconductor fin. A polysilicon resistor is formed on exposed surfaces of the dielectric material and surrounding the at least one semiconductor fin. An interconnect dielectric material is formed above the polysilicon resistor. The interconnect dielectric material has at least one contact structure that extends through the interconnect dielectric to an upper surface of the polysilicon resistor.
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