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United States of America Patent
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app pub date -
Nov 7, 2014
filing date -
Jun 29, 2011
priority date (Note) -
Abandoned
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Abstract
A method for forming a device is disclosed. A substrate having first and second major surfaces is provided. A stress buffer is formed in the substrate. A through silicon via (TSV) contact is formed between the stress buffer. The stress buffer has a depth less than a depth of the TSV contact. The stress buffer alleviates stress created by the difference in coefficient thermal expansion (CTE) between the TSV contact and the substrate.
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