Semiconductor device and method for forming openings and trenches in insulating layer by first LDA and second LDA for RDL formation
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United States of America Patent
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Mar 28, 2017
Grant Date -
Mar 5, 2015
app pub date -
Oct 13, 2014
filing date -
Mar 21, 2012
priority date (Note) -
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Abstract
A semiconductor device has a semiconductor die with an encapsulant deposited over the semiconductor die. A first insulating layer having high tensile strength and elongation is formed over the semiconductor die and encapsulant. A first portion of the first insulating layer is removed by a first laser direct ablation to form a plurality of openings in the first insulating layer. The openings extend partially through the first insulating layer or into the encapsulant. A second portion of the first insulating layer is removed by a second laser direct ablation to form a plurality of trenches in the first insulating layer. A conductive layer is formed in the openings and trenches of the first insulating layer. A second insulating layer is formed over the conductive layer. A portion of the second insulating layer is removed by a third laser direct ablation. Bumps are formed over the conductive layer.
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