Nonvolatile semiconductor memory device and method of controlling the same

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United States of America Patent

PATENT NO 9171637
APP PUB NO 20150063032A1
SERIAL NO

14162970

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Abstract

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This nonvolatile semiconductor memory device comprises: a word line connected to a control gate; a bit line electrically connected to one end of a NAND cell unit; a source line electrically connected to the other end of the NAND cell unit; and a control circuit that controls a voltage applied to a semiconductor layer, the control gate, the bit line, and the source line.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shimura, Yasuhiro Yokohama, JP 122 1156

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