Method for manufacturing solid-state image sensor

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United States of America Patent

PATENT NO 9318525
APP PUB NO 20150064827A1
SERIAL NO

14449299

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Abstract

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A first pixel includes a first charge accumulation portion of a first conductivity type in a first region. A second pixel includes a second charge accumulation portion of the first conductivity type in a second region and a semiconductor region of a second conductivity type in a third region. Impurities of the second conductivity type are doped in the third region and the impurities of the second conductivity type are doped in at least the second region to generate a first difference between quantities of doping the impurities of the second conductivity type in the first and second regions. Impurities are doped in the first and second regions to reduce a second difference, caused by the first difference, between net quantities of doping impurities of the first conductivity type in the first and second regions.

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Patent Owner(s)

Patent OwnerAddress
CANON KABUSHIKI KAISHAOHTA-KU TOKYO 146-8501

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Itoh, Hideyuki Kawasaki, JP 16 48

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