FinFET with dielectric isolation by silicon-on-nothing and method of fabrication

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United States of America Patent

PATENT NO 9478549
APP PUB NO 20150064855A1
SERIAL NO

14529332

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Abstract

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An improved finFET and method of fabrication using a silicon-on-nothing process flow is disclosed. Nitride spacers protect the fin sides during formation of cavities underneath the fins for the silicon-on-nothing (SON) process. A flowable oxide fills the cavities to form an insulating dielectric layer under the fins.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3065 29582
Haran, Balasubramanian S Watervliet, US 102 2027
Ponoth, Shom Clifton Park, US 240 3542
Standaert, Theodorus Eduardus Clifton Park, US 29 328
Yamashita, Tenko Schenectady, US 599 4947

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