Forming source/drain zones with a dielectric plug over an isolation region between active regions
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United States of America Patent
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Dec 27, 2016
Grant Date -
Mar 5, 2015
app pub date -
Nov 6, 2014
filing date -
Jan 4, 2012
priority date (Note) -
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Abstract
An embodiment includes forming an isolation region between first and second active regions in a semiconductor, forming an opening between the first and second active regions by removing a portion of the isolation region, and forming a dielectric plug within the opening so that the dielectric plug is between the first and second active regions and so that a portion of the dielectric plug extends below upper surfaces of the first and second active regions. The dielectric plug may be formed of a dielectric material having a lower removal rate than a dielectric material of the isolation region for a particular isotropic removal chemistry.
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