Stacked nanowire

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United States of America Patent

PATENT NO 9252016
APP PUB NO 20150064891A1
SERIAL NO

14017822

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Abstract

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A method of fabricating stacked nanowire for a transistor gate and a stacked nanowire device are described. The method includes etching a fin as a vertical structure from a substrate and forming two or more pairs of spacers at vertically separated positions of the fin. The method also includes oxidizing to form the nanowires at the vertically separated positions of the fin.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3065 29582
Doris, Bruce B Brewster, US 796 13219
Hashemi, Pouya White Plains, US 599 4445
Khakifirooz, Ali Mountain View, US 842 11865
Reznicek, Alexander Troy, US 1406 11120

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