PROCESS OF MANUFACTURING THE GATE OXIDE LAYER
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United States of America Patent
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Issued Date -
Mar 5, 2015
app pub date -
Nov 18, 2013
filing date -
Sep 2, 2013
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Abandoned
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Abstract
A process of manufacturing the gate oxide layer, which uses the wet oxidation by deuterium to form gate oxide layer, wherein the nitriding treatment is applied to formed gate oxide layer by high temperature annealing process, the stable Si-D bonds is formed on surface of the gate oxide layer to reduce silicon dangling bonds, which reduce the defect of the gate oxide interface and lower the interface defect density of the gate oxide layer and the charge density effectively to avoid NBTI, is provided.
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