SURFACE PASSIVATION OF SILICON BASED WAFERS
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United States of America Patent
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Issued Date -
Mar 12, 2015
app pub date -
Nov 14, 2014
filing date -
Apr 14, 2005
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Abandoned
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Abstract
The surface recombination velocity of a silicon sample is reduced by deposition of a thin hydrogenated amorphous silicon or hydrogenated amorphous silicon carbide film, followed by deposition of a thin hydrogenated silicon nitride film. The surface recombination velocity is further decreased by a subsequent anneal. Silicon solar cell structures using this new method for efficient reduction of the surface recombination velocity is claimed.
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