METHOD AND SYSTEM FOR REAL TIME INSPECTION OF A SILICON WAFER
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United States of America Patent
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Issued Date -
Mar 12, 2015
app pub date -
Apr 14, 2013
filing date -
Apr 17, 2012
priority date (Note) -
Abandoned
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Abstract
There is provided a method and system for real time inspection of a silicon wafer. The method includes using an infrared plane polariscope to obtain an image of a bonded interface of the silicon wafer, the image showing stress patterns; and assessment of the stress patterns. The stress patterns in a form of at least one butterfly pattern indicates a presence of at least one of: at least one trapped particle, trapped gases and at least one de-bonding region. No computer/algorithm processing is carried out to locate defects/de-bondings at the bonded interface. Furthermore, the stress fields being generated can be used to approximate the size of the de-bonding region/trapped particle. The system employs the infrared plane polariscope to obtain an image of a bonded interface of the silicon wafer.
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