Vertical bit line wide band gap TFT decoder

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United States of America Patent

PATENT NO 9105468
APP PUB NO 20150069320A1
SERIAL NO

14020647

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Abstract

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A 3D memory array having a vertically oriented thin film transistor (TFT) selection device that has a body formed from a wide energy band gap semiconductor is disclosed. The wide energy band gap semiconductor may be an oxide semiconductor, such as a metal oxide semiconductor. As examples, this could be an InGaZnO, InZnO, HfInZnO, or ZnInSnO body. The source and drains can also be formed from the wide energy band gap semiconductor, although these may be doped for better conduction. The vertically oriented TFT selection device serves as a vertical bit line selection device in the 3D memory array. A vertical TFT select device has a high drive current, a high breakdown voltage and low leakage current.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Higashitani, Masaaki Cupertino, US 272 4618
Rabkin, Peter Cupertino, US 142 3181

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