Importance

Loading Importance Indicators...

Abstract

According one embodiment, a semiconductor device includes: a first electrode; a second electrode; a first semiconductor layer of a first conductivity type provided between the first electrode and the second electrode, the first semiconductor layer including silicon carbide; a second semiconductor layer of the first conductivity type provided between the first semiconductor layer and the second electrode, the second semiconductor layer having a lower impurity concentration than the first semiconductor layer, and the second semiconductor layer including silicon carbide; a third semiconductor layer of a second conductivity type provided between the second semiconductor layer and the second electrode, and the third semiconductor layer including silicon carbide; and a plurality of insulating layers provided between the third semiconductor layer and the second electrode.

Loading the Abstract Image...

First Claim