Nonvolatile semiconductor memory device, method for manufacturing same, and manufacturing apparatus
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United States of America Patent
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Jul 14, 2015
Grant Date -
Mar 12, 2015
app pub date -
Jan 29, 2014
filing date -
Sep 11, 2013
priority date (Note) -
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Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes: a semiconductor layer; a first insulating film provided on the semiconductor layer; a floating gate layer provided on the first insulating film; a second insulating film provided on the floating gate layer; and a gate electrode provided on the second insulating film, the first insulating film including silicon, oxygen, and carbon. Concentration of the carbon in a direction from the semiconductor layer side toward the floating gate layer side has a maximum between the semiconductor layer and the floating gate layer, and the maximum being located nearer to the semiconductor layer side than to the floating gate layer side.
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