Semiconductor-on-insulator device including stand-alone well implant to provide junction butting
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United States of America Patent
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Jun 16, 2015
Grant Date -
Mar 12, 2015
app pub date -
Sep 11, 2013
filing date -
Sep 11, 2013
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Abstract
A semiconductor device includes a semiconductor-on-insulator (SOI) substrate having a bulk substrate layer, an active semiconductor layer, and a buried insulator layer interposed between the bulk substrate layer and the active semiconductor layer. A first source/drain (S/D) region includes a first stand-alone butting implant having a first butting width. A second S/D region includes a second stand-alone butting implant having a second butting width. A gate well-region is interposed between the first and second S/D regions. The gate well-region has a gate width that is greater than the first and second butting widths.
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