SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20150069519A1
SERIAL NO

14470365

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Abstract

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A semiconductor device includes a first transistor having a gate, a source/drain and a drain/source coupled to a first node, a first power and the first node, respectively; a second transistor having a gate, a source/drain and a drain/source coupled to the first node, the first power and a third node, respectively; a third transistor having a gate, a source/drain and a drain/source coupled to a reference, a second node and the first node, respectively; a fourth transistor having a gate, a source/drain and a drain/source coupled to an input, the second node and the third node, respectively; a fifth transistor having a gate, a source/drain and a drain/source coupled to the first node, a second power and the second node, respectively; and a sixth transistor having a gate, a source/drain and a drain/source coupled to the reference, the second power and the second node, respectively.

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Patent Owner(s)

Patent OwnerAddress
MICRON TECHNOLOGY INC8000 SOUTH FEDERAL WAY POST OFFICE BOX 6 BOISE ID 83707-0006

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aoki, Mamoru Tokyo, JP 47 451
Oishi, Kanji Tokyo, JP 44 836

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