MAGNETIC MEMORY AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Mar 12, 2015
app pub date -
Mar 10, 2014
filing date -
Sep 11, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate, a first magnetoresistive element provided on the substrate. A second magnetoresistive element which is provided on the substrate and is arranged next to the first magnetoresistive element. Each of the first and second magnetoresistive elements includes a first magnetic layer, a tunnel barrier layer and a second magnetic layer. The tunnel barrier layer is provided on the first magnetic layer, the second magnetic layer is provided on the tunnel barrier layer. A first stress member having a tensile stress as an internal stress is provided on an area including a side face of the stacked body.
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