Heat dissipation through device isolation

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9337078
APP PUB NO 20150069571A1
SERIAL NO

14024075

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Abstract

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According to a structure herein, a silicon substrate has an active device in the silicon substrate. A dielectric film is on the active device. An isolation trench is in the dielectric film surrounding the active device. The trench extends through the dielectric film and at least partially into the silicon substrate. A core is in the isolation trench. The core comprises material having thermal conductivity greater than silicon dioxide and electrical conductivity approximately equal to silicon dioxide.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gambino, Jeffrey P Westford, US 531 7330
Liu, Qizhi Lexington, US 213 1352
Ye, Zhenzhen South Burlington, US 25 194
Zhang, Yan South Burlington, US 792 6453

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