Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface
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United States of America Patent
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Nov 14, 2017
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Mar 12, 2015
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Nov 17, 2014
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Sep 26, 2012
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Abstract
A high-k gate dielectric interface with a group III-V semiconductor surface of a non-planar transistor channel region is non-directionally doped with nitrogen. In nanowire embodiments, a non-directional nitrogen doping of a high-k gate dielectric interface is performed before or concurrently with a conformal gate electrode deposition through exposure of the gate dielectric to liquid, vapor, gaseous, plasma, or solid state sources of nitrogen. In embodiments, a gate electrode metal is conformally deposited over the gate dielectric and an anneal is performed to uniformly accumulate nitrogen within the gate dielectric along the non-planar III-V semiconductor interface.
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