SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20150076506A1
SERIAL NO

14215321

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Abstract

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This disclosure provides a semiconductor device which includes a GaN-based semiconductor layer having a surface with an angle of not less than 0 degree and not more than 5 degrees with respect to an m-plane or an a-plane, a first electrode provided above the surface and having a first end, and a second electrode provided above the surface to space apart from the first electrode, having a second end facing the first end, and a direction of a segment connecting an arbitrary point of the first end and an arbitrary point of the second end is different from a c-axis direction of the GaN-based semiconductor layer.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Abe, Kazuhide Kanagawa, JP 96 1729
Fujimoto, Hidetoshi Kanagawa, JP 101 2168
Furukawa, Masaru Hyogo, JP 40 238
Iida, Atsuko Kanagawa, JP 45 262
Masuko, Shingo Ishikawa, JP 24 105
Naka, Toshiyuki Ishikawa, JP 42 233
Ohno, Tetsuya Ishikawa, JP 65 515
Ono, Tasuku Ishikawa, JP 18 47
Saito, Yasunobu Ishikawa, JP 52 381
Uchihara, Takeshi Saitama, JP 22 89
Yagi, Yasunari Hyogo, JP 8 45
Yanase, Naoko Tokyo, JP 32 447
Yasumoto, Takaaki Kanagawa, JP 45 776
Yoshioka, Akira Ishikawa, JP 102 550
Yumoto, Miki Kanagawa, JP 17 47

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