Semiconductor device
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United States of America Patent
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May 19, 2015
Grant Date -
Mar 19, 2015
app pub date -
Mar 17, 2014
filing date -
Sep 13, 2013
priority date (Note) -
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Abstract
A semiconductor device of an embodiment has a first conductive type first semiconductor layer, a second conductive type second semiconductor layer provided in the first semiconductor layer having a first lateral surface and a first bottom portion contacting the first semiconductor layer. The second semiconductor layer has a first void portion inside. A second conductive type impurity concentration decreases from the first lateral surface toward the first void portion. And the device has a second conductive type third semiconductor layer provided in the first semiconductor layer such that the first semiconductor layer is sandwiched between the third semiconductor layer and the second semiconductor layer. The third semiconductor layer has a second lateral surface and a second bottom portion contacting the first semiconductor layer. The third semiconductor layer has a second void portion inside. A second conductive type impurity concentration decreases from the second lateral surface toward the second void portion.
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