SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Mar 19, 2015
app pub date -
Feb 26, 2014
filing date -
Sep 13, 2013
priority date (Note) -
Abandoned
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Abstract
A method of manufacturing a semiconductor device includes: forming a trench on a semiconductor layer of a first conductive type; forming a first insulation film which covers an inner surface of the trench; forming a first conductive material on the first insulation film; etching the first conductive material and then the first insulation film such that the semiconductor layer is exposed on an inner surface of an upper portion of the trench and an upper end portion of the first conductive material is positioned above an upper end portion of the first insulation film; re-etching the first conductive material; forming a second insulation film which covers the semiconductor layer exposed on the inner surface of the upper portion of the trench and the first conductive material; and forming a second conductive material on the first insulation film and the second insulation film.
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