Programmable diode array for high density OTP application

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United States of America Patent

PATENT NO 9007805
APP PUB NO 20150078062A1
SERIAL NO

14042608

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Abstract

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A device for one-time-programmable (OTP) memory may include a capacitor formed by a conductive layer, an oxide layer, and a semiconductor well, and a diode that is formed after programing the device. The device may be programmable by applying a voltage between the conductive layer and the semiconductor well. The applied voltage may be capable of rupturing the oxide layer at one or more points. The conductive layer, the oxide layer, and the semiconductor well may be native CMOS process formations.

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Patent Owner(s)

  • AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Carlson, Roy Milton Plymouth, US 2 12
Lu, Yong Edina, US 261 2353

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