SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20150084130A1
SERIAL NO

14397558

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

The present invention provides a method for manufacturing a semiconductor structure, which comprises following steps: providing an SOI substrate, onto which a heavily doped buried layer and a surface active layer are formed; forming a gate stack and sidewall spacers on the substrate; forming an opening at one side of the gate stack, wherein the opening penetrates through the surface active layer, the heavily doped buried layer and reaches into a silicon film located on an insulating buried layer of the SOI substrate; filling the opening to form a plug; forming source/drain regions, wherein the source region overlaps with the heavily doped buried layer, and a part of the drain region is located in the plug. Accordingly, the present invention further provides a semiconductor structure. In the present invention, the heavily doped buried layer is favorable for reducing width of depletion layers at source/drain regions and suppressing short-channel effects. The heavily doped buried layer overlaps with the source region, which thence forms a heavily doped pn junction favorable for suppressing floating body effects of SOI MOS devices, thereby improving performance of semiconductor devices. Besides, no body contact is needed in the present invention, thus device area and manufacturing cost are saved.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES100029 BEIJING CITY CHAOYANG DISTRICT BEITUCHENG WEST ROAD NO 3 CHINESE ACADEMY OF SCIENCES INSTITUTE OF MICROELECTRONICS MUNICIPAL DISTRICT BEIJING CITY 100029

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Luo, Zhijiong Poughkeepsie, US 249 2954
Yin, Haizhou Poughkeepsie, US 241 2072
Zhu, Huilong Poughkeepsie, US 589 8348

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation