ETCHING METHOD, AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT AND SEMICONDUCTOR DEVICE USING THE SAME, AS WELL AS KIT FOR PREPARATION OF ETCHING LIQUID

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United States of America Patent

SERIAL NO

14558838

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Abstract

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A method of etching a semiconductor substrate, having the steps of: preparing an etching liquid by mixing a first liquid with a second liquid to be in the range of pH from 8.5 to 14, the first liquid containing a basic compound, the second liquid containing an oxidizing agent; and then applying the etching liquid to a semiconductor substrate on a timely basis for etching a Ti-containing layer in or on the semiconductor substrate.

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Patent Owner(s)

Patent OwnerAddress
FUJIFILM CORPORATIONTOKYO 106-8620

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
INABA, Tadashi Haibara-gun, JP 75 517
KAMIMURA, Tetsuya Haibara-gun, JP 146 434
MURO, Naotsugu Haibara-gun, JP 46 181
NISHIWAKI, Yoshinori Haibara-gun, JP 21 167

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