Vertical transistor devices for embedded memory and logic technologies

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United States of America Patent

PATENT NO 9306063
SERIAL NO

14039696

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Abstract

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Vertical transistor devices are described. For example, in one embodiment, a vertical transistor device includes an epitaxial source semiconductor region disposed on a substrate, an epitaxial channel semiconductor region disposed on the source semiconductor region, an epitaxial drain semiconductor region disposed on the channel semiconductor region, and a gate electrode region surrounding sidewalls of the semiconductor channel region. A composition of at least one of the semiconductor regions varies along a longitudinal axis that is perpendicular with respect to a surface of the substrate.

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Patent Owner(s)

  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Doyle, Brian S Portland, US 369 13967
Kotlyar, Roza Portland, US 54 783
Kuo, Charles C Hillsboro, US 90 1503
Shah, Uday Portland, US 159 4609

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