Method of manufacturing semiconductor device using inert, material, and oxidation-reduction gases

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United States of America Patent

PATENT NO 9093274
APP PUB NO 20150093885A1
SERIAL NO

14194952

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Abstract

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According to one embodiment, a method of manufacturing a semiconductor device. The method includes introducing an inert gas and a material gas into a predetermined space, applying a voltage to generate plasma in the space after introducing the inert gas and the material gas so as to form a semiconductor layer on a substrate, introducing an oxidation-reduction gas in the predetermined space after the voltage is applied, and stopping the introduction of the material gas, the inert gas, and the oxidation-reduction gas after the voltage is applied.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Mizushima, Ichiro Mie-ken, JP 140 2381
Okuda, Shinya Mie-ken, JP 49 517
Watanabe, Kie Mie-ken, JP 1 0

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