VAPOR PHASE FILM DEPOSITION APPARATUS
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United States of America Patent
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Issued Date -
Apr 9, 2015
app pub date -
Sep 30, 2014
filing date -
Oct 4, 2013
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Abstract
A film-deposition apparatus simultaneously realizes high partial pressure of volatile components, great flow velocity and smooth deposition rate curve at lower gas consumption. The apparatus comprises a disk-like susceptor, a face member opposing the susceptor, an injector, a material gas introduction portion, and a gas exhaust portion. A wafer holder retains a substrate, and a supporting member of the susceptor retains the wafer holder. The susceptor revolves around its central axis and the substrate rotates by itself. The opposing face member is structured so that a fan-shaped recessed portion and a fan-shaped raised portion are formed alternately in a radial manner, by which the height of the flow channel changes in a circumferential direction. The apparatus provides film deposition equivalent to that attained under optimal conditions by a conventional apparatus at a smaller flow rate of the carrier gas, and increases a partial pressure of material gases of volatile components.
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