BURIED TRENCH ISOLATION IN INTEGRATED CIRCUITS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Apr 9, 2015
app pub date -
Oct 8, 2013
filing date -
Oct 8, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A system and method for providing electrical isolation between closely spaced devices in a high density integrated circuit (IC) are disclosed herein. An integrated circuit (IC) comprising a substrate, a first device, a second device, and a trench in the substrate and a method of fabricating the same are also discussed. The trench is positioned between first and second devices and comprises a first filled portion and a second filled portion. The first filled portion of the trench comprises a dielectric material that forms a buried trench isolation for providing electrical isolation between the first and second devices.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully