Integrated circuit and method for fabricating the same having a replacement gate structure
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United States of America Patent
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Jul 12, 2016
Grant Date -
Apr 9, 2015
app pub date -
Dec 16, 2014
filing date -
Jul 5, 2012
priority date (Note) -
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Abstract
An integrated circuit includes a first FET structure and a second FET structure, both of which being formed over a silicon substrate. The first FET structure includes a high-k material layer, a layer of a first workfunction material formed over the high-k material layer, a layer of a barrier material formed over the first workfunction material layer; and a layer of a gate fill material formed over the barrier material layer. The entirety of the barrier material layer and the gate fill material layer are formed above the first workfunction material layer. The second FET structure includes a layer of the high-k material, a layer of a second workfunction material formed over the high-k material layer, a low-resistance material layer formed over the second workfunction material layer and a layer of the barrier material formed over the low-resistance material layer.
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