THROUGH-SILICON VIA STRUCTURE AND METHOD FOR IMPROVING BEOL DIELECTRIC PERFORMANCE
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United States of America Patent
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app pub date -
Dec 16, 2014
filing date -
Sep 11, 2013
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Abstract
An improved through-silicon via (TSV) is disclosed. A semiconductor substrate has a a back-end-of-line (BEOL) stack formed thereon. The BEOL stack and semiconductor substrate has a TSV cavity formed thereon. A conformal protective layer is disposed on the interior surface of the TSV cavity, along the BEOL stack and partway into the semiconductor substrate. The conformal protective layer serves to protect the dielectric layers within the BEOL stack during subsequent processing, improving the integrated circuit quality and product yield.
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