Nonvolatile semiconductor memory device
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United States of America Patent
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Mar 15, 2016
Grant Date -
Apr 9, 2015
app pub date -
Mar 13, 2014
filing date -
Oct 9, 2013
priority date (Note) -
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Abstract
A nonvolatile semiconductor memory device according to an embodiment includes a control circuit configured to cause data to be stored in a memory cell by setting the memory cell to be included in one of resistance value distributions. The control circuit is configured to set a first resistance value distribution and a second resistance value distribution, the second resistance value distribution having a resistance value larger than that of the first resistance value distribution, and to set a second width to be larger than a first width, the second width being a width between a second upper limit value of the second resistance value distribution and a second lower limit value of the second resistance value distribution, and the first width being a width between a first upper limit value of the first resistance value distribution and a first lower limit value of the first resistance value distribution.
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