Forming isolated fins from a substrate
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United States of America Patent
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-
Aug 16, 2016
Grant Date -
Apr 16, 2015
app pub date -
Oct 10, 2013
filing date -
Oct 10, 2013
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A method of isolating a semiconductor fin from an underlying substrate including forming a masking layer around a base portion of the fin, forming spacers on a top portion of the fin above the masking layer, removing the masking layer to expose the base portion of the fin, and converting the base portion of the fin to an isolation region that electrically isolates the fin from the substrate. The base portion of the fin may be converted to an isolation region by oxidizing the base portion of the fin, using for example a thermal oxidation process. While converting the base portion of the fin to an isolation region, the spacers prevent the top portion of the fin from also being converted.
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