Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9337810
APP PUB NO 20150102855A1
SERIAL NO

14517824

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Abstract

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There is provided a semiconductor device in which an influence of a power source noise is suppressed and the number of pins and the area of the semiconductor device are reduced. A power source line for a first internal circuit and a power source line for a second internal circuit are coupled to a common pin terminal. A ground line for the first internal circuit and a ground line for the second internal circuit are coupled to another common pin terminal. A power source noise generated on the power source line for the first internal circuit during an operation of the first internal circuit is absorbed by a P-channel MOS transistor and a capacitor. A power source noise generated on the ground line is absorbed by an N-channel MOS transistor and the capacitor.

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Patent Owner(s)

  • RENESAS ELECTRONICS CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tasaki, Yoshio Itami, JP 4 17

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