Method for producing 3C-SiC epitaxial layer, 3C-SiC epitaxial substrate, and semiconductor device

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United States of America Patent

PATENT NO 9758902
SERIAL NO

14514993

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Abstract

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A 3C-SiC epitaxial layer is produced by a production method including: epitaxially growing a first 3C-SiC layer on a Si substrate; oxidizing the first 3C-SiC layer; removing an oxide film on a surface of the 3C-SiC layer; and epitaxially growing a second 3C-SiC layer on the 3C-SiC layer after the oxide film is removed.

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Patent Owner(s)

  • SEIKO EPSON CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kawana, Noriyasu Chino, JP 3 5
Watanabe, Yukimune Hokuto, JP 18 98

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