Method providing an epitaxial growth having a reduction in defects and resulting structure

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United States of America Patent

PATENT NO 9099309
APP PUB NO 20150108600A1
SERIAL NO

14056026

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Abstract

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Disclosed are methods and resulting structures which provide an opening for epitaxial growth, the opening having an associated projection for reducing the size of the contact area on a substrate at which growth begins. During growth, the epitaxial material grows vertically from the contact area and laterally over the projection. The projection provides a stress relaxation region for the lateral growth to reduce dislocation and stacking faults at the side edges of the grown epitaxial material.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Guo, Song Xinyang, CN 60 126
Hu, Yushi Boise, US 88 560
Meade, Roy Boise, US 55 288
Tang, Sanh D Boise, US 280 4010
Violette, Michael P Boise, US 97 1349
Wells, David H Boise, US 152 3293

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